Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC3357 |
| Part Number | 2SC3357 |
| Manufacturer | GME |
| Title | NPN Silicon Transistor |
| Description | Production specification NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD 2SC3357 FEATURES Pb z Low Noise and High Gain Lead-free NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, z Large PT in Small Package PT : 2 W wit. |
| Features | Pb z Low Noise and High Gain Lead-free NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, z Large PT in Small Package PT : 2 W with 16 cm2*0.7 mm Ceramic Substrate. APPLICATIONS z The 2SC3357 is an NPN silicon epitaxial transistor designed For low noise amplifier at VHF, UHF and CATV band. z It has large dynamic range an. |
2SC3357 |
| Part Number | 2SC3357 |
| Manufacturer | CEL |
| Title | NPN SILICON RF TRANSISTOR |
| Description | NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, I. |
| Features |
• Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 0.7 mm (t) ceramic substrate) • Small package : 3-pin power minimold package ORDERING INFORMATION Part Number NE85634-A 2. |
2SC3357 |
| Part Number | 2SC3357 |
| Manufacturer | Kexin |
| Title | NPN Silicon RF Transistor |
| Description | SMD Type NPN Silicon RF Transistor 2SC3357 IC Transistors Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz Abso. |
| Features | Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperatu. |
2SC3357 |
| Part Number | 2SC3357 |
| Manufacturer | Renesas |
| Title | NPN EPITAXIAL SILICON RF TRANSISTOR |
| Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa. |
| Features |
• Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate) • Small package : 3-pin power minimold package ORDERING INFORMATION Part Number 2SC3357 2SC3. |
2SC3357 |
| Part Number | 2SC3357 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | SOT-89 NPN 。Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,,。 Low noise and high gain, large PC in small package. / Applications 、。 low noise amplifier at VHF, UHF and CATV band applications. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector / Marking . |
| Features | ,,。 Low noise and high gain, large PC in small package. / Applications 、。 low noise amplifier at VHF, UHF and CATV band applications. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector / Marking hFE Classifications Symbol hFE Range Marking H 50～100 HRH PIN 3：Emitter F 80～160 HRF E 125～250 HRE G 200～300 HRG ** ** ** ** http://www.fsbrec.com 1/6 2SC3357 Rev.E Mar.-201. |
2SC3357 |
| Part Number | 2SC3357 |
| Manufacturer | NEC |
| Title | NPN Silicon Transistor |
| Description | The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. 4.5±0.1 PACKAGE DIMENSIONS (Unit: mm) FEATURES • Low Noise and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB T. |
| Features |
• Low Noise and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz • Large PT in Small Package PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate. NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, 0.8 MIN. E 0.42 ±0.06 1.6±0.2 1.5±0.1 C B 0.42±0.06 1.5 0.47 ±0.06 3.0 0.41 +0.05 −0.03 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Volt. |
2SC3357 |
| Part Number | 2SC3357 |
| Manufacturer | UTC |
| Title | NPN EPITAXIAL SILICON RF TRANSISTOR |
| Description | The UTC 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. ORDERING INFORMATION Order Number Lead Free Halogen Free 2SC3357L-xx-AB3-R 2SC3357G-xx-AB3-R Note: Pin Assignment: B. |
| Features | 0 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL Collector Cut-off Current ICBO Emitter Cutoff Current IEBO . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3352 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC3352 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3352 |
Panasonic |
NPN Transistor |
|
| 4 | 2SC3352A |
Panasonic |
NPN Transistor |
|
| 5 | 2SC3353 |
Inchange Semiconductor |
Power Transistor |
|
| 6 | 2SC3353 |
Panasonic |
Silicon NPN Transistor |
|
| 7 | 2SC3353A |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC3353A |
Panasonic |
Silicon NPN Transistor |
|
| 9 | 2SC3354 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SC3355 |
NEC |
NPN Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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