Busque con el número de pieza junto con el fabricante o la descripción
2SC3357 |
Click to view a larger image
| Part Number | 2SC3357 |
| Manufacturer | GME |
| Description | Production specification NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD 2SC3357 FEATURES Pb z Low Noise and High Gain Lead-free NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f =... |
| Features |
Pb
z Low Noise and High Gain
Lead-free
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
z Large PT in Small Package
PT : 2 W with 16 cm2*0.7 mm Ceramic Substrate.
APPLICATIONS
z The 2SC3357 is an NPN silicon epitaxial transistor designed For low noise amplifier at VHF, UHF and CATV band.
z It has large dynamic range and good current characteristic.
ORDERING INFORMATION
Type No.
Marking
2SC3357
RH/RF/RE
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VCBO
Collector-... |
| Document |
 2SC3357 Data Sheet
PDF 213.80KB |
Desde 2024. D4U Semiconductor.
|