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2SC3357 |
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| Part Number | 2SC3357 |
| Manufacturer | CEL |
| Description | NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga... |
| Features |
• Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 0.7 mm (t) ceramic substrate) • Small package : 3-pin power minimold package ORDERING INFORMATION Part Number NE85634-A 2SC3357-A NE85634-T1-A 2SC3357-T1-A Quantity 25 pcs (Non reel) (Pb-Free) Supplying Form • 12 mm wide embossed taping 1 kpcs/reel (Pb-Free) • Collector face the perforation side of the tape Remark ... |
| Document |
 2SC3357 Data Sheet
PDF 195.46KB |
Desde 2024. D4U Semiconductor.
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