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INCHANGE |
N-Channel MOSFET Transistor ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤2.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide var |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤24mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and |
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Inchange Semiconductor |
N-channel mosfet transistor With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL VDSS VGS ID Ptot Tj Tstg PARAMETER Drain-source voltage (VGS=0) Gate-source voltag |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤4.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High efficiency synchronous rectifica |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤9.7mΩ ·Enhancement mode: Vth =3.0 to 5.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchr |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high effci |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Advanced Process Technology ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·Fully Avalanche Rated DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switch mode power supply ·Unint |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤2.6mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchr |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Vo |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Vo |
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Desde 2024. D4U Semiconductor.
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