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IRF540N |
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| Part Number | IRF540N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 33 IDM Drain Current-Single Pulsed 110 PD Total Dissipation @TC=25℃ 130 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A... |
| Document |
 IRF540N Data Sheet
PDF 240.38KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF540 |
Vishay |
Power MOSFET |
|
| 2 | IRF540 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRF540 |
NXP |
N-channel TrenchMOS transistor |
|
| 4 | IRF540 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 5 | IRF540 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | IRF540 |
International Rectifier |
HEXFET POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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