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IXYS Corporation |
Power MOSFET • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Symbol VDSS VGS( |
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IXYS Corporation |
MOSFET l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to prote |
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IXYS Corporation |
IXFH21N60 |
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IXYS Corporation |
HiPerRF Power MOSFETs F-Class: MegaHertz Switching l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and res |
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IXYS Corporation |
MegaMOSFET l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to prote |
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IXYS Corporation |
Power MOSFET l l l l l l International standard packages JEDEC TO-264, epoxy meet UL 94 V-0 flammability classification miniBLOC, (ISOTOP-compatible) with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low packa |
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IXYS Corporation |
Power MOSFET • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Symbol VDSS VGS( |
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IXYS Corporation |
HiPerFETTM Power MOSFETs • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • Low drain to tab |
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IXYS Corporation |
HiPerRF Power MOSFETs l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and res |
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IXYS Corporation |
HiPerRF Power MOSFETs l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and res |
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IXYS Corporation |
HiPerRF Power MOSFETs F-Class: MegaHertz Switching l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and res |
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IXYS Corporation |
High Voltage MegaMOSTMFETs l l l l l l International standard packages JEDEC TO-264, epoxy meet UL 94 V-0 flammability classification miniBLOC, (ISOTOP-compatible) with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low packa |
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IXYS Corporation |
(IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching |
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Desde 2024. D4U Semiconductor.
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