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IXFX21N100F IXYS Corporation HiPerRF Power MOSFETs F-Class: MegaHertz Switching Datasheet

IXFX21N100F MOSFET DIS.21A 1000V N-CH PLUS247 HIPERFET THT


IXYS Corporation
IXFX21N100F
Part Number IXFX21N100F
Manufacturer IXYS Corporation
Description HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFX 21N100F IXFK 21N100F VDSS = 1000 V ID25 = 21 A RDS(on) = 0.50 Ω trr ≤ 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IA...
Features l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l 13.5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages l PLUS 247TM package for clip or spring mounting l Space savings l High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 ...

Document Datasheet IXFX21N100F datasheet pdf (98.85KB)
Distributor Distributor
Ozdisan Elektronik
Stock 1 In Stock
Price
30 units: 6.7172 USD
1 units: 7.38892 USD
BuyNow BuyNow BuyNow (Manufacturer a IXYS Integrated Circuits Division)




IXFX21N100F Distributor

part
IXYS Integrated Circuits Division
IXFX21N100F
MOSFET DIS.21A 1000V N-CH PLUS247 HIPERFET THT
30 units: 6.7172 USD
1 units: 7.38892 USD
Distributor
Ozdisan Elektronik

1 In Stock
BuyNow BuyNow





IXFX21N100F Similar Datasheet

Part Number Description
IXFX21N100Q
manufacturer
IXYS
HiPerFET Power MOSFET
www.DataSheet4U.com HiPerFET TM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFK 21N100Q IXFX 21N100Q VDSS = 1000 V ID25 = 21 A RDS(on)= 0.50 Ω trr ≤ 250 ns PLUS 247TM (IXFX) Maximum Ratings 1000 1000 ± 20 ± 30 21 84 21 60 2.5 10 500 -...




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