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IXFM21N50 |
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| Part Number | IXFM21N50 |
| Manufacturer | IXYS Corporation |
| Description | HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE: IXFM21N50 IXFM24N50 Symbol Test Conditions M... |
| Features |
• International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Symbol VDSS VGS(th) IGSS IDSS Test Conditions VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 TJ = 25°C TJ = 125°C V 4V ±100 nA 200 µA 1 mA Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mo... |
| Document |
 IXFM21N50 Data Sheet
PDF 149.12KB |
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