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| Part Number | IXFM10N90 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IXFM10N90 |
| Manufacturer | IXYS |
| Title | Power MOSFETs |
| Description | HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM10N90 IXFH/IXFM12N90 IXFH13N90 V DSS 900 V 900 V 900 V I D25 10 A 12 A 13 A trr £ 250 ns R DS(on) 1.1 W 0.9 W 0.8 W Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS VDGR V GS VGSM ID. |
| Features | l International standard packages l Low R HDMOSTM process DS (on) l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS. |
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| 1 | IXFM10N100 |
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| 2 | IXFM11N80 |
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| 3 | IXFM12N100 |
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| 4 | IXFM12N90 |
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| 5 | IXFM12N90 |
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| 6 | IXFM13N50 |
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| 7 | IXFM13N80 |
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| 8 | IXFM13N90 |
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| 9 | IXFM15N60 |
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| 10 | IXFM20N60 |
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Desde 2024. D4U Semiconductor.
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