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IXFM10N90 |
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| Part Number | IXFM10N90 |
| Manufacturer | ETC |
| Description | HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V 900 V ID25 10 A 12 A 13 A RDS(on) 1.1 W 0.9 W 0... |
| Features |
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier
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Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 V V nA mA mA W W W
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 • ID25 TJ = 25°C TJ = 125°C 4.5 ±100 25 1 1.1 0.9 0.8 Applications DC-DC converters Synchronous rectifi... |
| Document |
 IXFM10N90 Data Sheet
PDF 86.00KB |
Similar Datasheet
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| 1 | IXFM10N90 |
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Desde 2024. D4U Semiconductor.
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