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IXFM10N90 |
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| Part Number | IXFM10N90 |
| Manufacturer | IXYS |
| Description | HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM10N90 IXFH/IXFM12N90 IXFH13N90 V DSS 900 V 900 V 900 V I D25 10 A 12 A 13 A trr £ 250 ns R DS(on) ... |
| Features |
l International standard packages l Low R HDMOSTM process
DS (on)
l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect l Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VDSS VGS(th) IGSS IDSS
RDS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25 10N90 12N90 13N90 Pulse test, t £ 300 ms, duty cycle d £ 2 % 900 2.0 IXYS reserves the... |
| Document |
 IXFM10N90 Data Sheet
PDF 84.49KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXFM10N90 |
ETC |
HiPerFET Power MOSFETs |
|
| 2 | IXFM10N100 |
IXYS Corporation |
Power MOSFET |
|
| 3 | IXFM11N80 |
IXYS Corporation |
Power MOSFET |
|
| 4 | IXFM12N100 |
IXYS Corporation |
Power MOSFET |
|
| 5 | IXFM12N90 |
ETC |
HiPerFET Power MOSFETs |
|
| 6 | IXFM12N90 |
IXYS |
Power MOSFETs |
|
Desde 2024. D4U Semiconductor.
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