IRF AUI Hoja de datos

No.	parte #	Fabricante	Descripción
1	AUIRFZ44N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Descrip
2	AUIRF7303Q	Infineon	Dual N-Channel MOSFET  Advanced Planar Technology  Dual N Channel MOSFET  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
3	AUIRFU540Z	Infineon	Power MOSFET of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a
4	AUIRF7669L2TR1	International Rectifier	Automotive DirectFET Power MOSFET of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum
5	AUIRF7309Q	Infineon	Dual N/P-Channel MOSFET  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Lead-Free, RoHS Compliant  Automotive Qualified * AUTOMOTIVE GRADE AUIR
6	AUIRF3710Z	International Rectifier	Power MOSFET O O O O O O O AUIRF3710Z AUIRF3710ZS HEXFET® Power MOSFET D Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS = 100V RD
7	AUIRF7648M2TR	International Rectifier	DirectFET Power MOSFET of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum
8	AUIRF7303Q	International Rectifier	Power MOSFET l l l l l l l l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* D1 D1 D2 D2
9	AUIRF7732S2TR	International Rectifier	Power MOSFET of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Ordering Informa
10	AUIRFZ44VZS	International Rectifier	Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * HEXFET® Power MOSFET D V(BR)DSS 60V RDS(on) typ
11	AUIRF7648M2TR1	International Rectifier	DirectFET Power MOSFET of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum
12	AUIRFP064N	International Rectifier	Power MOSFET HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(B
13	AUIRF8739L2TR	International Rectifier	Power MOSFET of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Base Part Number
14	AUIRF7304Q	Infineon	Dual P-Channel MOSFET  Advanced Planar Technology  Low On-Resistance  Dual P Channel MOSFET  Dynamic dv/dt Rating  Logic Level  150°C Operating Temperature  Fast Switching  Lead-Free, RoHS Compliant  Automotive Qualified * AUTOMOTIVE GRADE AUIRF7304Q S1 G1 S
15	AUIRF4905	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Descrip
16	AUIRF7799L2TR1	International Rectifier	Power MOSFET
17	AUIRF2903ZL	Infineon	Power MOSFET  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive ap
18	AUIRF7739L2TR1	International Rectifier	N-Channel MOSFET of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum
19	AUIRF2804L	International Rectifier	Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRF2804 AUIRF2804S AUIR
20	AUIRF2907Z	International Rectifier	HEXFET Power MOSFET ● ● ● ● ● HEXFET® Power MOSFET D AUIRF2907Z 75V 4.5mΩ 170A 75A ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualif