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AUIRF7648M2TR1 International Rectifier DirectFET Power MOSFET Datasheet


International Rectifier
AUIRF7648M2TR1
Part Number AUIRF7648M2TR1
Manufacturer International Rectifier
Description The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible...
Features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS (tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (...

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AUIRF7648M2TR1 Similar Datasheet

Part Number Description
AUIRF7648M2TR
manufacturer
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DirectFET Power MOSFET
The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications...
AUIRF7648M2TR
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The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applicati...




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