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AUIRF7648M2TR International Rectifier DirectFET Power MOSFET Datasheet

AUIRF7648M2TR N채널 60V 14A(Ta), 68A(Tc) 2.5W(Ta), 63W(Tc) 표면 실장 DirectFET™ 아이소메트릭 M4


International Rectifier
AUIRF7648M2TR
Part Number AUIRF7648M2TR
Manufacturer International Rectifier
Description The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible...
Features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS (tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (...

Document Datasheet AUIRF7648M2TR datasheet pdf (310.05KB)
Distributor Distributor
DigiKey
Stock 4800 In Stock
Price
4800 units: 2352.6848 KRW
BuyNow BuyNow BuyNow (Manufacturer a Infineon Technologies AG)




AUIRF7648M2TR Distributor

part
Infineon Technologies AG
AUIRF7648M2TR
MOSFET, AUTO, N-CH, 60V, DIRECTFETM4
1000 units: 2213 KRW
500 units: 2631 KRW
100 units: 2941 KRW
Distributor
element14 Asia-Pacific

0 In Stock
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part
Infineon Technologies AG
AUIRF7648M2TR
N채널 60V 14A(Ta), 68A(Tc) 2.5W(Ta), 63W(Tc) 표면 실장 DirectFET™ 아이소메트릭 M4
4800 units: 2352.6848 KRW
Distributor
DigiKey

4800 In Stock
BuyNow BuyNow
part
Infineon Technologies AG
AUIRF7648M2TR
MOSFETs 60VAUTO GRADE 1 N-CH HEXFET 7mOhms
1 units: 3.27 USD
10 units: 2.85 USD
25 units: 2.65 USD
100 units: 2.3 USD
250 units: 2.19 USD
500 units: 1.96 USD
1000 units: 1.65 USD
4800 units: 1.59 USD
Distributor
Mouser Electronics

3105 In Stock
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part
Infineon Technologies AG
AUIRF7648M2TR
Infineon MOSFET AUIRF7648M2TR, PK
2400 units: 25.31 HKD
1200 units: 25.704 HKD
5 units: 26.362 HKD
500 units: 27.058 HKD
250 units: 28.482 HKD
Distributor
RS

9570 In Stock
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part
Infineon Technologies AG
AUIRF7648M2TR
Single N-Channel 60 V 7 mOhm 35 nC Automotive HEXFET® Power Mosfet - DirectFET®
4800 units: 1.62 USD
Distributor
Future Electronics

0 In Stock
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part
Infineon Technologies AG
AUIRF7648M2TR
AUIRF7648M2 - 55V-60V N-Channel Automotive MOSFET
1000 units: 1.62 USD
500 units: 1.71 USD
100 units: 1.79 USD
25 units: 1.86 USD
1 units: 1.9 USD
Distributor
Rochester Electronics

11234 In Stock
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part
Infineon Technologies AG
AUIRF7648M2TR
Trans MOSFET N-CH 60V 14A 9-Pin Direct-FET M4 T/R - Tape and Reel (Alt: AUIRF7648M2TR)
No price available
Distributor
Avnet Americas

0 In Stock
No Longer Stocked
part
Infineon Technologies AG
AUIRF7648M2TR
Trans MOSFET N-CH 60V 14A 9-Pin Direct-FET M4 T/R (Alt: SP001521562)
No price available
Distributor
EBV Elektronik

0 In Stock
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AUIRF7648M2TR Similar Datasheet

Part Number Description
AUIRF7648M2TR
manufacturer
Infineon
Power MOSFET
The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applicati...
AUIRF7648M2TR1
manufacturer
International Rectifier
DirectFET Power MOSFET
The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications...




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