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AUIRF7669L2TR1 |
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| Part Number | AUIRF7669L2TR1 |
| Manufacturer | International Rectifier |
| Description | The AUIRF7669L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the ... |
| Features |
of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS (tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (... |
| Document |
 AUIRF7669L2TR1 Data Sheet
PDF 306.99KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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