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PNP Transistor 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD830 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= |
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2SD837 r Saturation Voltage IC= 5A; IB= 20mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V ICBO Collector Cutoff Current VCB= 60V; IE= 0 ICEO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 30V; IB= 0 VEB= 5V; IC=0 hFE-1 DC Current Gain |
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Silicon NPN Darlington Power Transistor A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V ICBO Collector Cutoff Current VCB= 60V; IE= 0 ICEO Collector Cutoff Current VCE= 30V; IB= 0 IEBO Emitter Cutoff Current VE |
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Silicon NPN Darlington Power Transistor Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V( |
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NPN Transistor i is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD839 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE |
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Schottky Barrier Rectifier ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high freque |
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PNP Transistor herwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3.0A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V ICBO Collector |
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N-Channel MOSFET ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS |
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NPN Transistor red trademark isc Silicon NPN Darlington Power Transistor 2SD834 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 180 |
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NPN Transistor wer Transistor 2SD835 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CB |
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INCHANGE |
NPN Transistor IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 8mA VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IC= 2A ; VCE= 4V VCB= 60V; IE= 0 ICEO Collector Cutoff Current VCE= 30V; IB= 0 IEBO Emitter Cutoff |
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Desde 2024. D4U Semiconductor.
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