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D837 |
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| Part Number | D837 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·High Switching Speed APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU... |
| Features |
r Saturation Voltage IC= 5A; IB= 20mA
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 3V
ICBO Collector Cutoff Current
VCB= 60V; IE= 0
ICEO Collector Cutoff Current IEBO Emitter Cutoff Current
VCE= 30V; IB= 0 VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 3V
hFE-2
DC Current Gain
Switching Times
IC= 3A ; VCE= 3V
ton Turn-On Time toff Turn-Off Time
IC= 3A; IB1= -IB2= 12mA
MIN TYP. MAX UNIT
60 V
2V
4V
2.5 V
0.2 mA
0.5 mA
2 μA
1000
1000
10000
0.3 μs 4 μs
isc website：www.iscsemi.cn
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| Document |
 D837 Data Sheet
PDF 128.29KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | D83 |
BI Technologies |
Single In-Line Conformal Coated Diode Network |
|
| 2 | D83-004 |
Fuji Electric |
SCHOTTKY BARRIER DIODE |
|
| 3 | D83-006 |
Fuji Electric |
SCHOTTKY BARRIER DIODE |
|
| 4 | D8320N |
Infineon |
Rectifier Diode |
|
| 5 | D833 |
Fuji Electric |
2SD833 |
|
| 6 | D835 |
Fuji Electric |
2SD835 |
|
Desde 2024. D4U Semiconductor.
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