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2SD835 |
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| Part Number | 2SD835 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE= 400(Min) @IC= 4A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A... |
| Features |
wer Transistor
2SD835
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 10mA
ICBO
Collector Cutoff Current
VCB= 400V; IE=0
IEBO
Emitter Cutoff Current
VEB= 15V; IC=0
hFE
DC Current Gain... |
| Document |
 2SD835 Data Sheet
PDF 209.70KB |
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