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| Part Number | 2SD834 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD834 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220 package www.datasheet4u.com ·High DC current gain ·DARLINGTON ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Electronic ignitor ·Relay and solenoid drivers ·Switching regulators ·Motor controls PINNING PIN 1 2 3 Base Collector;connected to mounting base E. |
| Features | uctor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITION. |
| Part Number | 2SD834 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC Current Gain : hFE= 1500(Min) @ IC= 2A, VCE= 2V ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·Wide Area of Safe Operation ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignitor ·Relay& solenoid driver. |
| Features | red trademark isc Silicon NPN Darlington Power Transistor 2SD834 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 180 V V(BR)CEO Collector-Emitter Breadkown Voltage IC= 10mA; IB= 0 200 V V(BR)CBO Collector-Base Breadkown Voltage IC= 0.1mA; IE= 0 250 V VCE(sat). |
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Desde 2024. D4U Semiconductor.
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