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2SD836 |
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| Part Number | 2SD836 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE= 1000(Min.)@IC= 2A ·High Switching Speed ·Complement to Type 2SB750 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AF p... |
| Features |
IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 8mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IC= 2A ; VCE= 4V VCB= 60V; IE= 0
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 2A ; VCE= 4V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 2A; IB1=IB2= 8mA
MIN TYP. MAX UNIT
60
V
2.5
V
2.8
V
0.2
mA
0.5
mA
2
mA
1000
1000
10000
0.4
μs
4
μs
hFE-2Classifications R Q P 1000-2500 2000-5000 4000-100... |
| Document |
 2SD836 Data Sheet
PDF 191.23KB |
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Desde 2024. D4U Semiconductor.
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