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PNP Transistor t MAX 10 100 UNIT ℃/W ℃/W BDW56/58/60 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDW56/58/60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION |
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INCHANGE |
NPN Transistor ed trademark isc Silicon NPN Darlington Power Transistor BDW39 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitte |
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INCHANGE |
Silicon PNP Darlington Power Transistor l Resistance, Junction to Case isc website：www.iscsemi.com MAX UNIT 1.56 ℃/W 62.5 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAM |
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INCHANGE |
PNP Transistor e Rth j-c Thermal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci |
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INCHANGE |
NPN Transistor 10 100 UNIT ℃/W ℃/W BDW55/57/59 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDW55/57/59 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Colle |
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INCHANGE |
PNP Transistor t MAX 10 100 UNIT ℃/W ℃/W BDW56/58/60 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDW56/58/60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION |
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INCHANGE |
NPN Transistor mal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci |
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INCHANGE |
PNP Transistor e Rth j-c Thermal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci |
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INCHANGE |
NPN Transistor ℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW23 45 V(BR)CEO Collector-Emitter Breakdown Voltage BDW23A BDW23B IC= 50mA ;IB=0 60 80 V BDW23C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB |
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INCHANGE |
Silicon PNP Power Transistor e isc website：www.iscsemi.com MAX UNIT 1.4 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDW52/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW52 CONDITIONS MIN TYP. MAX |
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INCHANGE |
Silicon PNP Power Transistor e isc website：www.iscsemi.com MAX UNIT 1.4 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDW52/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW52 CONDITIONS MIN TYP. MAX |
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INCHANGE |
Silicon PNP Power Transistor e isc website：www.iscsemi.com MAX UNIT 1.4 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDW52/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW52 CONDITIONS MIN TYP. MAX |
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INCHANGE |
NPN Transistor ector-Emitter Saturation Voltage IC=5A; IB= 0.5A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.5A 1.5 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25m |
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INCHANGE |
NPN Transistor /W Rth j-c Thermal Resistance, Junction to Case 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAM |
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INCHANGE |
NPN Transistor ent 35.7 ℃/W BDW83/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW83/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MI |
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INCHANGE |
NPN Transistor ent 35.7 ℃/W BDW83/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW83/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MI |
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INCHANGE |
NPN Transistor mal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci |
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INCHANGE |
NPN Transistor mal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci |
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INCHANGE |
NPN Transistor mal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci |
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INCHANGE |
PNP Transistor e Rth j-c Thermal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci |
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Desde 2024. D4U Semiconductor.
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