BDW60 |
Part Number | BDW60 |
Manufacturer | INCHANGE |
Description | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= -45V- BDW56 = -60V- BDW58 = -80V- BDW60 ·Complement to Type BDW55/57/59 ·Minimum Lot-to-Lot variations for robust device performance and reliable op... |
Features |
t
MAX 10 100
UNIT ℃/W ℃/W
BDW56/58/60
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistors
BDW56/58/60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDW56
-45
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDW58 IC= -10mA ;IB=0
-60
V
BDW60
-80
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
-0.5 V
VBE(on) Base-Emitter On Voltage
IC= -0.5A ; VCE= -2V
-1.0 V
ICBO
Collector Cutoff Current
VCB= VCBOmax;IE= 0
-0.1 μA
ICBO
Collector Current
... |
Document |
BDW60 Data Sheet
PDF 210.99KB |
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