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| Part Number | BDW63B |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BDW63B |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min.)@ IC= 2A ·Complement to Type BDW64/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE M. |
| Features | mal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS BDW63 V(BR)CEO Collector-Emitter Breakdown Voltage BDW63A BDW63B IC= 30mA; IB=0 BDW63C BDW63D VCE(sat)-1 VC. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDW63 |
Power Innovations Limited |
NPN Transistor |
|
| 2 | BDW63 |
INCHANGE |
NPN Transistor |
|
| 3 | BDW63A |
Power Innovations Limited |
NPN Transistor |
|
| 4 | BDW63A |
INCHANGE |
NPN Transistor |
|
| 5 | BDW63C |
Power Innovations Limited |
NPN Transistor |
|
| 6 | BDW63C |
INCHANGE |
NPN Transistor |
|
| 7 | BDW63D |
Power Innovations Limited |
NPN Transistor |
|
| 8 | BDW63D |
INCHANGE |
NPN Transistor |
|
| 9 | BDW60 |
INCHANGE |
PNP Transistor |
|
| 10 | BDW64 |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS |
|
Desde 2024. D4U Semiconductor.
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