Part Number | BDW63A |
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Part Number | BDW63A |
Manufacturer | Power Innovations Limited |
Title | NPN Transistor |
Description | BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS Copyright © 1997 Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW64, BDW64A, BDW64B, BDW64C and BDW64D 60 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) q q q 1 2 . |
Features | rature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEB IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 6 0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. Derate linearly to. |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BDW63 |
Power Innovations Limited |
NPN Transistor | |
2 | BDW63 |
INCHANGE |
NPN Transistor | |
3 | BDW63B |
Power Innovations Limited |
NPN Transistor | |
4 | BDW63B |
INCHANGE |
NPN Transistor | |
5 | BDW63C |
Power Innovations Limited |
NPN Transistor | |
6 | BDW63C |
INCHANGE |
NPN Transistor | |
7 | BDW63D |
Power Innovations Limited |
NPN Transistor | |
8 | BDW63D |
INCHANGE |
NPN Transistor | |
9 | BDW60 |
INCHANGE |
PNP Transistor | |
10 | BDW64 |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS |