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| Part Number | BDW63D |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BDW63D |
| Manufacturer | Power Innovations Limited |
| Title | NPN Transistor |
| Description | BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS Copyright © 1997 Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW64, BDW64A, BDW64B, BDW64C and BDW64D 60 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) q q q 1 2 . |
| Features | rature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEB IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 6 0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. Derate linearly to. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDW63 |
Power Innovations Limited |
NPN Transistor |
|
| 2 | BDW63 |
INCHANGE |
NPN Transistor |
|
| 3 | BDW63A |
Power Innovations Limited |
NPN Transistor |
|
| 4 | BDW63A |
INCHANGE |
NPN Transistor |
|
| 5 | BDW63B |
Power Innovations Limited |
NPN Transistor |
|
| 6 | BDW63B |
INCHANGE |
NPN Transistor |
|
| 7 | BDW63C |
Power Innovations Limited |
NPN Transistor |
|
| 8 | BDW63C |
INCHANGE |
NPN Transistor |
|
| 9 | BDW60 |
INCHANGE |
PNP Transistor |
|
| 10 | BDW64 |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS |
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Desde 2024. D4U Semiconductor.
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