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BDW63A |
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| Part Number | BDW63A |
| Manufacturer | INCHANGE |
| Description | ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min.)@ IC= 2A ·Complement to Type BDW64/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI... |
| Features |
mal Resistance, Junction to Case
MAX 2.08 62.5
UNIT ℃/W ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
BDW63/A/B/C/D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBO L
PARAMETER
CONDITIONS
BDW63
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDW63A BDW63B IC= 30mA; IB=0 BDW63C
BDW63D
VCE(sat)-1 VCE(sat)-2
Collector-Emitter Voltage
Collector-Emitter Voltage
Saturation IC= 2A; IB= 12mA Saturation IC= 6A; IB= 60mA
VBE(on) VECF
Base-Emitter On Voltage C-E Diode Forward Voltage
IC= 2A; VCE= 3V... |
| Document |
 BDW63A Data Sheet
PDF 212.62KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDW63 |
Power Innovations Limited |
NPN Transistor |
|
| 2 | BDW63 |
INCHANGE |
NPN Transistor |
|
| 3 | BDW63A |
Power Innovations Limited |
NPN Transistor |
|
| 4 | BDW63B |
Power Innovations Limited |
NPN Transistor |
|
| 5 | BDW63B |
INCHANGE |
NPN Transistor |
|
| 6 | BDW63C |
Power Innovations Limited |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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