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BDW64B |
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| Part Number | BDW64B |
| Manufacturer | INCHANGE |
| Description | ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min.)@ IC= -2A ·Complement to Type BDW63/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
| Features |
e
Rth j-c Thermal Resistance, Junction to Case
MAX 2.08 62.5
UNIT ℃/W ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDW64
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDW64A BDW64B IC= -30mA; IB= 0 BDW64C
BDW64D
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -60mA
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -3V
VECF
C-E Diode Forward ... |
| Document |
 BDW64B Data Sheet
PDF 215.73KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDW64 |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS |
|
| 2 | BDW64 |
INCHANGE |
PNP Transistor |
|
| 3 | BDW64A |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS |
|
| 4 | BDW64A |
INCHANGE |
PNP Transistor |
|
| 5 | BDW64B |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS |
|
| 6 | BDW64C |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS |
|
Desde 2024. D4U Semiconductor.
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