INCHANGE B67 Hoja de datos

No.	parte #	Fabricante	Descripción
1	B679	INCHANGE	Silicon PNP Power Transistor C= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -5V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -2
2	2SB679	INCHANGE	Silicon PNP Power Transistor r-Base Breakdown Voltage IE= -1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -5V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V
3	2SB675	INCHANGE	PNP Transistor akdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA ICBO Collector Cutoff Curre
4	2SB677	INCHANGE	PNP Transistor DITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A, IB= -4mA VBE(sat)) Base-Emitter Saturation Voltage IC= -2A, IB= -4mA ICBO Collector Cutoff Current VCB= -60V, IE= 0
5	2SB674	INCHANGE	PNP Transistor eakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA ICBO Collector Cutoff Curr
6	2SB673	INCHANGE	PNP Transistor ecified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A ,IB= -14mA VBE(sat) Bas
7	2SB676	INCHANGE	PNP Transistor CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA VBE(sat)) Base-Emitter Saturation Voltage IC= -3A ,