2SB677 INCHANGE PNP Transistor Datasheet. existencias, precio

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2SB677

INCHANGE
2SB677
2SB677 2SB677
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Part Number 2SB677
Manufacturer INCHANGE
Description ·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2A ·Minimum Lot-...
Features DITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A, IB= -4mA VBE(sat)) Base-Emitter Saturation Voltage IC= -2A, IB= -4mA ICBO Collector Cutoff Current VCB= -60V, IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -3A; VCE= -2V 2SB677 MIN TYP. MAX UNIT -40 V -1.5 V -2.0 V -20 μA -2.5 mA 2000 1000 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information c...

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