2SB673 INCHANGE PNP Transistor Datasheet. existencias, precio

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2SB673

INCHANGE
2SB673
2SB673 2SB673
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Part Number 2SB673
Manufacturer INCHANGE
Description ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type ...
Features ecified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A ,IB= -14mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A ,IB= -6mA ICBO Collector Cutoff Current VCB= -100V, IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A ; VCE= -3V hFE-2 DC Current Gain IC= -7A ; VCE= -3V 2SB673 MIN TYP. MAX UNIT -100 V -1.5 V -2.0 V -2.5 V -100 μA -4 mA 2000 15000 1000 NOTICE: ISC rese...

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