2SB673 |
Part Number | 2SB673 |
Manufacturer | INCHANGE |
Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type ... |
Features |
ecified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A ,IB= -14mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A ,IB= -6mA
ICBO
Collector Cutoff Current
VCB= -100V, IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -3A ; VCE= -3V
hFE-2
DC Current Gain
IC= -7A ; VCE= -3V
2SB673
MIN TYP. MAX UNIT
-100
V
-1.5
V
-2.0
V
-2.5
V
-100 μA
-4
mA
2000
15000
1000
NOTICE: ISC rese... |
Document |
2SB673 Data Sheet
PDF 210.31KB |
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