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2SB676 |
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| Part Number | 2SB676 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement t... |
| Features |
CS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA
VBE(sat)) Base-Emitter Saturation Voltage
IC= -3A ,IB= -6mA
ICBO
Collector Cutoff Current
VCB= -100V, IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -2V
hFE-2
DC Current Gain
IC= -3A; VCE= -2V
2SB676
MIN TYP. MAX UNIT
-80
V
-1.5
V
-2.0
V
-20 μA
-2.5 mA
2000
1000
NOTICE： ISC reserves the rights to make changes of the content herein the ... |
| Document |
 2SB676 Data Sheet
PDF 210.13KB |
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