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INCHANGE |
N-Channel MOSFET ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE M |
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INCHANGE |
N-Channel MOSFET ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE M |
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INCHANGE |
P-Channel MOSFET ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Motor cont |
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INCHANGE |
P-Channel MOSFET ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage- : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =15mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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INCHANGE |
N-Channel MOSFET ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE M |
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INCHANGE |
N-Channel MOSFET ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE M |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=-25A@ TC=25℃ ·Drain Source Voltage- : VDSS=-30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 34mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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INCHANGE |
N-Channel MOSFET ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE M |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·B |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=-12A@ TC=25℃ ·Drain Source Voltage- : VDSS=-60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 115mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 4.2A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.6Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =4.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·De |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 2.6A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.1Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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INCHANGE |
P-Channel MOSFET ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage- : VDSS=-40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =22mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 140mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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INCHANGE |
N-Channel MOSFET ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switc |
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INCHANGE |
P-Channel MOSFET ·With TO-252( DPAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤46mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA |
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Desde 2024. D4U Semiconductor.
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