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AOD3N40 N-Channel MOSFET

AOD3N40


AOD3N40
Part Number AOD3N40
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AOD3N40

Alpha & Omega Semiconductors
AOD3N40
Part Number AOD3N40
Manufacturer Alpha & Omega Semiconductors
Title N-Channel MOSFET
Description Product Summary The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be ad.
Features above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 400 ±30 2.6 1.6 5.6 6.5 1.5 34 68 5 50 0.4 -50 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 46 2.1 Maximum 55 0.5 2.5 Units V V .


AOD3N40

Freescale
AOD3N40
Part Number AOD3N40
Manufacturer Freescale
Title N-Channel MOSFET
Description The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC- DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly in.
Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 500V@150℃ 2.6A < 3.1Ω TO252 DPAK D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25° C B Power Dissipation Derate above.


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