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AOD3N50 |
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| Part Number | AOD3N50 |
| Manufacturer | INCHANGE |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.8 A IDM Drain Current-Single Pluse 9.0 A PD Total Dissipation @TC=25℃ 57 W TJ Max. Opera. |
| Features |
·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.8 A IDM Drain Current-Single Pluse 9.0 A PD Total Dissipation @TC=25℃ 57 W TJ M. |
| Datasheet |
 AOD3N50 Data Sheet
PDF 260.93KB |
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AOD3N50 |
| Part Number | AOD3N50 |
| Manufacturer | Freescale |
| Title | N-Channel MOSFET |
| Description | The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted . |
| Features | VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 2.8A < 3Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction a. |
AOD3N50 |
| Part Number | AOD3N50 |
| Manufacturer | Alpha & Omega Semiconductors |
| Title | N-Channel MOSFET |
| Description | Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these par. |
| Features | Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL S DG G Maximum 500 ±30 2.8 1.8 9 2 60 120 50 5 57 0.45 -50 to 150 300 S Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 45 1.8 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOD3N40 |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
|
| 2 | AOD3N40 |
Freescale |
N-Channel MOSFET |
|
| 3 | AOD3N40 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | AOD3N60 |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
|
| 5 | AOD3N60 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | AOD3N80 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | AOD3N80 |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
|
| 8 | AOD32334C |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET |
|
| 9 | AOD360A70 |
Alpha & Omega Semiconductors |
700V N-Channel Power Transistor |
|
| 10 | AOD380A60 |
Alpha & Omega Semiconductors |
600V N-Channel Power Transistor |
|
Desde 2024. D4U Semiconductor.
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