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AOD360A70 700V N-Channel Power Transistor Datasheet


AOD360A70

Alpha & Omega Semiconductors
AOD360A70

Part Number AOD360A70
Manufacturer Alpha & Omega Semiconductors
Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger,PD Adapter,TV,lighting Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V ...
Features rgy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Maximum 700 ±20 ±30 12 7.6 48 3.4 5.8 50 100 20 138 1.1 Units V V V A A mJ mJ V/ns W W/°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RqJA RqCS RqJC Typical 45 0.7 Maximum 55 0.5 0.9 ...

Document Datasheet AOD360A70 datasheet pdf (667.15KB)



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