AOD403 |
Part Number | AOD403 |
Manufacturer | INCHANGE |
Description | Isc P-Channel MOSFET Transistor INCHANGE Semiconductor AOD403 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Motor contorl ·DC-DC conventers ·ABSOLUTE MAX. |
Features |
·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Motor contorl ·DC-DC conventers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -30 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±25 -70 -55 -200 PD Total Dissipation @TC=25℃ 90 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~1. |
Datasheet |
AOD403 Data Sheet
PDF 236.84KB |
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AOD403 |
Part Number | AOD403 |
Manufacturer | Alpha & Omega Semiconductors |
Title | 30V P-Channel MOSFET |
Description | Product Summary The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. VDS ID (at VGS= -20V) RDS(ON) (at. |
Features | . |
AOD403 |
Part Number | AOD403 |
Manufacturer | VBsemi |
Title | P-Channel MOSFET |
Description | AOD403 P-Channel 30 V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.009 at VGS = - 10 V 0.012 at VGS = - 4.5 V ID (A)a ± 80 ± 80 FEATURES • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMU. |
Features |
• Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current TC = 25 °C TC = 125 °C Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH Power Dissipation TC = 25 °C (TO-22. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AOD400 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
2 | AOD402 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
3 | AOD404 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
4 | AOD405 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
5 | AOD406 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
6 | AOD407 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
7 | AOD407 |
INCHANGE |
N-Channel MOSFET | |
8 | AOD408 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
9 | AOD409 |
Alpha & Omega Semiconductors |
60V P-Channel MOSFET | |
10 | AOD409 |
INCHANGE |
P-Channel MOSFET |