| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Inchange Semiconductor |
2SC2026 2V; IC= 0 0.1 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 25 200 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 15 2.0 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 0.75 1.1 pF Gpe Power Gain VCE= 10 V,IC= 10mA; |
|
|
|
|
Inchange Semiconductor |
2SC5803 IC= 8A; IB= 2A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1.0 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Transistor O(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A VBE(sat) Base-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A ICBO Collector Cutoff Current VCB=800V; IE= 0 ICES Col |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor Voltage IC= 100mA ; IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 100mA ; IB= 10mA ICBO Emitter Cutoff Current VCB= 60V; IE= 0 IEBO Collector Cutoff Current VEB= 5V; IC= 0 hFE(1) DC Current Gain IC= 2mA ; VCE= 6V hFE(2) DC Curren |
|
|
|
|
INCHANGE |
NPN Transistor ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 9V; IC= 0 hFE DC Current Gain IC= 1.8A; VCE= 4V 2SC5586 MIN TYP. MAX UNIT 550 V 0.5 V 1.2 V 100 μA 1 mA 10 40 NOTICE： ISC reserves the rights to mak |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistors S TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ; IC= 0 V |
|
|
|
|
INCHANGE |
NPN Transistor e IC= 100mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5 A VBE Base-Emitter Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitt |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor ector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 12A; IB=2.4A VBE(sat) Base-Emitter Saturation Voltage IC= 12A; IB=2.4A ICBO Collector Cutoff |
|
|
|
|
Inchange Semiconductor |
Power Transistor 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC |
|
|
|
|
INCHANGE |
NPN Transistor lector-Base Breakdown Voltage IC= 10mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 5A ; IB= 1.2A ICBX Collector Cu |
|
|
|
|
INCHANGE |
NPN Power Transistor CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 V(BR)CBO Collector-base breakdown voltage IC =5mA ; IE=0 V(BR)EBO Emitter-base breakdown voltage IE =5mA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor NGE Semiconductor 2SC1970 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA, IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ V(BR)EBO |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistors ARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Transistor unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-Emitter Voltage IC=1mA ; RBE=∞ 42 58 V VCBO Collector-Emitter Sustaining Voltage IC= 0.1mA ;I 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= |
|
|
|
|
Inchange Semiconductor |
2SC4148 tor-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Transistor BO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V Cre Feed-Back Capacitance ︱S21e︱2 Insertion Power Gain IE= 0 ; VCB= 10V;f= 1.0MHz IC= 20mA ; VCE= 10V;f= |
|
|
|
|
Inchange Semiconductor |
Silicon NPN RF Transistor BO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V Cre Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz ︱S |
|
|
|
|
Inchange Semiconductor |
2SC1827 or-base breakdown voltage IC=0.1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A ICBO Collector cut-off current VC |
|
|
|
|
INCHANGE |
NPN Transistor ) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 70mA ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 0.7A; VCE= 10V fT Current-Gain—Bandwidth Product IE= -0.7A; VCE= 1 |
|
|
|
|
INCHANGE |
NPN Transistor age IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= 5V ICBO Collector Cutoff Current VCB= 230V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Curre |
|
Desde 2024. D4U Semiconductor.
|