Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC5242 |
| Part Number | 2SC5242 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon NPN TRANSISTOR |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm • High Collector breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) . |
| Features | in the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2012-08-31 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-. |
2SC5242 |
| Part Number | 2SC5242 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3P(I) package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline . |
| Features | -emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=8 A;IB=0.8A IC=7A ; VCE=5V VCB=230V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 55 35 MIN 230 www.datasheet4u.com 2SC5242 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO. |
2SC5242 |
| Part Number | 2SC5242 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable opera. |
| Features |
• High Current Capability: IC = 17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA4213. • Thermal and electrical Spice models are available • Same transistor is also available in: --TO264 package, 2SC5200/FJL4315 : 150 watts --TO220 package, FJP5200 : 8. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC524 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 2 | 2SC5241 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor |
|
| 3 | 2SC5241 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC5241 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 5 | 2SC5243 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC5244 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC5244 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 8 | 2SC5244 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 9 | 2SC5244A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SC5245 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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