| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hynix Semiconductor |
512Mb NAND FLASH and figure 2) Modify Block Replacement 1) Add x16 Characteristics 2) Modify read2 operation (sequential row read) 3) Add AC Characteristics - tOH : RE or CE High to O |
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Hynix Semiconductor |
32Gb NAND FLASH SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time. |
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Hynix Semiconductor |
(HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www.DataSheet4U.com - Pinout compatibility for all densities FAST BLOCK ERASE - Block |
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Hynix Semiconductor |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ |
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Hynix Semiconductor |
(HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory 2) Change AC Conditions table 3) Add tWW parameter ( tWW = 100ns, min) - Texts & Figures are added. - tWW is added in AC timing characteristics table. 4) Edit Copy Back Program operation step 5) Edit System Interface Using CE don’t care Figures. 6) |
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Hynix Semiconductor |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ |
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Hynix Semiconductor |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ |
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Hynix Semiconductor |
2Gbit (256Mx8bit/128Mx16bit) NAND Flash 1) Chnage AC Timing Characteristics tR Before 0.3 After 25 20 tCRRH 50 100 tRHOH 100 15 tRLOH 15 5 Nov. 21. 2006 Sep. 07. 2006 Preliminary May. 18. 2006 Preliminary History Draft Date Jan. 24. 2006 Remark Preliminary 2) Add AC Timing Characteris |
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Hynix Semiconductor |
(HY27UAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densit |
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Hynix Semiconductor |
(HY27UGxx Series) 2G-Bit NAND Flash 9) Change DC Characteristics (Table 8) - Operating Current ICC1 Typ Before 0.4 After 20 25 Max 40 45 ICC2 Typ 20 25 Max 40 45 ICC3 Typ 20 25 Max 40 45 Sep. 16. 2005 Preliminary 10) Change AC Characteristics - Errata is deleted. tWC Before After 60n |
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Hynix Semiconductor |
8G-Bit NAND Flash Memory 9) Change AC Characteristics - Errata is deleted. tWC Before After 0.4 - tR is change tR Before After 25us 30us 60ns 50ns tWP 35ns 25ns tWH 20ns 15ns Sep. 16. 2005 Preliminary 10) Change DC Characteristics (Table 8) - Operation Current ICC1 Typ Bef |
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Hynix Semiconductor |
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ |
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Hynix Semiconductor |
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ |
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Hynix Semiconductor |
(HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory 2) Change DC characteristics (Table 9) - Operating Current ICC1 Typ 0.3 Before After 20 15 Max 40 30 ICC2 Typ 20 15 Max 40 30 ICC3 Typ 20 15 Max 40 30 Aug. 19. 2005 Preliminary 3) Correct PKG dimension (TSOP PKG) CP Before After 0.050 0.100 Rev 0. |
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Hynix Semiconductor |
4Gbit (512K x 8-Bit) NAND Flash Rev. 0.3 / Nov. 2005 2 Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash Revision History Revision No. 1) Change AC Characteristics tR Before After 20 25 tCLS 0.2 Before After 12 15 tAR 10 15 tWP 12 15 tDS 12 15 tREA 18 20 tWC 25 30 tR |
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Hynix Semiconductor |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densit |
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Hynix Semiconductor |
(HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www.DataSheet4U.com - Pinout compatib |
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Hynix Semiconductor |
4Gbit (512Mx8bit) NAND Flash SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time. |
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Hynix Semiconductor |
2Gb NAND FLASH SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time. |
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Hynix Semiconductor |
2Gbit (256Mx8bit/128Mx16bit) NAND Flash 1) Chnage AC Timing Characteristics tR Before 0.3 After 25 20 tCRRH 50 100 tRHOH 100 15 tRLOH 15 5 Nov. 21. 2006 Sep. 07. 2006 Preliminary May. 18. 2006 Preliminary History Draft Date Jan. 24. 2006 Remark Preliminary 2) Add AC Timing Characteris |
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Desde 2024. D4U Semiconductor.
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