HY27UF081G2M |
Part Number | HY27UF081G2M |
Manufacturer | Hynix Semiconductor |
Title | (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory |
Features |
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - Manufact... |
Document |
HY27UF081G2M Data Sheet
PDF 420.81KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | HY27UF081G2A |
Hynix Semiconductor |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash | |
2 | HY27UF082G2A |
Hynix Semiconductor |
2Gbit (256Mx8bit/128Mx16bit) NAND Flash | |
3 | HY27UF082G2B |
Hynix Semiconductor |
2Gb NAND FLASH | |
4 | HY27UF082G2M |
Hynix Semiconductor |
(HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory | |
5 | HY27UF084G2B |
Hynix Semiconductor |
4Gbit (512Mx8bit) NAND Flash | |
6 | HY27UF084G2M |
Hynix Semiconductor |
4Gbit (512K x 8-Bit) NAND Flash |