HY27UF082G2M |
Part Number | HY27UF082G2M |
Manufacturer | Hynix Semiconductor |
Title | (HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory |
Features |
2) Change DC characteristics (Table 9) - Operating Current ICC1 Typ 0.3 Before After 20 15 Max 40 30 ICC2 Typ 20 15 Max 40 30 ICC3 Typ 20 15 Max 40 30 Aug. 19. 2005 Preliminary
3) Correct PKG dimension (TSOP PKG) CP Before After 0.050 0.100
Rev 0.3 / Aug. 2005
2
Preliminary HY27UF(08/16)2G2M Se... |
Document |
HY27UF082G2M Data Sheet
PDF 500.13KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | HY27UF082G2A |
Hynix Semiconductor |
2Gbit (256Mx8bit/128Mx16bit) NAND Flash | |
2 | HY27UF082G2B |
Hynix Semiconductor |
2Gb NAND FLASH | |
3 | HY27UF081G2A |
Hynix Semiconductor |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash | |
4 | HY27UF081G2M |
Hynix Semiconductor |
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory | |
5 | HY27UF084G2B |
Hynix Semiconductor |
4Gbit (512Mx8bit) NAND Flash | |
6 | HY27UF084G2M |
Hynix Semiconductor |
4Gbit (512K x 8-Bit) NAND Flash |