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HY27US081G1M |
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| Part Number | HY27US081G1M |
| Manufacturer | Hynix Semiconductor |
| Title | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
| Features |
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycl... |
| Document |
 HY27US081G1M Data Sheet
PDF 312.09KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HY27US08121A |
Hynix Semiconductor |
512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory |
|
| 2 | HY27US08121B |
Hynix Semiconductor |
512Mb NAND FLASH |
|
| 3 | HY27US08121M |
Hynix Semiconductor |
(HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
|
| 4 | HY27US08122B |
Hynix Semiconductor |
512Mb NAND FLASH |
|
| 5 | HY27US08281A |
Hynix Semiconductor |
(HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
|
| 6 | HY27US08561A |
Hynix Semiconductor |
(HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
|
Desde 2024. D4U Semiconductor.
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