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Hitachi Semiconductor |
MOS FET Power Amplifier • High stability: Load VSWR = 20 : 1 • Low power control current: 400 µA • Thin package: 5 mmt Ordering Information Type No PF0030 PF0032 Operating Frequency 824 to 849 MHz 872 to 905 MHz Application AMPS E-TACS Pin Arrangement • RF-B2 5 4 3 2 5 1 |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module for ADC Mobile Phone • High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK • Low input power: 0 dBm ave. Typ for π /4-DQPSK • Simple bias circuit • High speed switching: 8 µs Typ Pin Arrangement • RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0210 Internal |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module • Small package: 30 × 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ Ordering Information Type Name PF0341A PF0342A PF0343A PF0344A PF0345A Operating frequency 400 to 430 MHz 440 to 470 MHz 4 |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module for AMPS Handy Phone • • • • • Low voltage operation : 4.6 V 2 stage amplifier : +8 dBm input Lead less small package : 0.2 cc High efficiency : 48% Typ at 1 W Low power control current : 500 µA Typ Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G |
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Hitachi Semiconductor |
MOS FET Power Amplifier • High stability: Load VSWR = 20 : 1 • Low power control current: 400 µA • Thin package: 5 mmt Ordering Information Type No PF0030 PF0032 Operating Frequency 824 to 849 MHz 872 to 905 MHz Application AMPS E-TACS Pin Arrangement • RF-B2 5 4 3 2 5 1 |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Mobile Phone • Low power control current: 0.9 mA Typ • High speed switching: 1.5 µsec Typ • Wide power control range: 100 dB Typ Pin Arrangement • RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0121 Internal Diagram and External Circuit G GND Pin1 Pi |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Handy Phone • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supp |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Typ Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G A |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone • • • • • • 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +4.5 dBm input Lead less thin & Small package : 11 × 13.75 × 1.8 mm High effic |
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Hitachi Semiconductor |
(PF0313 / PF0314) MOS FET Power Amplifier Module for VHF Band • • • • Small package: 30 × 10 × 5.9 mm Low operation voltage: 7 W at 7.2 V High efficiency: 55% Typ Low power control current: 0.5 mA Max Ordering Information Type. Name PF0313 PF0314 Operating frequency 135 to 150 MHz 150 to 175 MHz Pin Arrangeme |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module for VHF Band • Small package: 30 × 10 × 5.9 mm • High efficiency: 55% Typ • Low power control current: 0.5 mA Max Pin Arrangement • RF-J 5 1 2 3 4 1: Pin 2: VPC 3: VDD 4: Pout 5: GND (Flange) PF0310A Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VP |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module for VHF Band |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module • Small package: 30 × 10 × 5.9 mm • High efficiency: 43% Typ at 9.6 V 40% Typ at 4.8 V • Low power control current: 150 µA Typ Pin Arrangement • RF-J 5 1 2 3 4 1: Pin 2: VPC 3: VDD 4: Pout 5: GND (Flange) www.DataSheet4U.com PF0340A Internal Diag |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module • Small package: 30 × 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ Ordering Information Type Name PF0341A PF0342A PF0343A PF0344A PF0345A Operating frequency 400 to 430 MHz 440 to 470 MHz 4 |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module • Small package: 30 × 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ Ordering Information Type Name PF0341A PF0342A PF0343A PF0344A PF0345A Operating frequency 400 to 430 MHz 440 to 470 MHz 4 |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone • • • • 3stage amplifier Small package: 0.2cc High efficiency: 45% Typ High speed switching: 0.9 µsec Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply cu |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone • • • • • 3stage amplifier : 0 dBm input Lead less thin & small package : 2 mm Max & 0.2cc High efficiency : 40% Typ at 32.5 dBm Wide gain control range : 70 dB Typ Low voltage operation : 3.5 V Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4 |
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Hitachi Semiconductor |
MOS FET Power Amplifier Module for PCS 1900 Handy Phone • • • • 3stage amplifier Small package : 0.2cc High efficiency : 45% Typ High speed switching : 0.9µsec Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply |
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Desde 2024. D4U Semiconductor.
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