PF01411A Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

PF01411A

Hitachi Semiconductor
PF01411A
PF01411A PF01411A
zoom Click to view a larger image
Part Number PF01411A
Manufacturer Hitachi Semiconductor
Description PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433C (Z) 4th Edition February 1997 Application • For E-GSM class4 880 to 915 MHz • For 4.8V nominal battery use Features • • • •...
Features



• High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement
• RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 10
  –30 to +100
  –30 to +100 5 Unit V A V mW °C °C W PF01411A Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltag...

Document Datasheet PF01411A Data Sheet
PDF 25.87KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 PF01411B
Hitachi Semiconductor
MOS FET Power Amplifier Module for E-GSM Handy Phone Datasheet
2 PF01410A
Hitachi Semiconductor
MOS FET Power Amplifier Module for GSM Handy Phone Datasheet
3 PF01412A
Hitachi Semiconductor
MOS FET Power Amplifier Module for E-GSM Handy Phone Datasheet
4 PF0100
NXP
14-channel configurable power management Datasheet
5 PF0100Z
NXP
14-channel configurable power management Datasheet
6 PF0121
Hitachi Semiconductor
MOS FET Power Amplifier Module for GSM Mobile Phone Datasheet
More datasheet from Hitachi Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad