PF01410A |
Part Number | PF01410A |
Manufacturer | Hitachi Semiconductor |
Description | PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B (Z) Product Preview 3rd. Edition November 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2... |
Features |
• • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 50 –30 to +100 –30 to +100 4 Unit V A V mW °C °C W PF01410A Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic dis... |
Document |
PF01410A Data Sheet
PDF 25.37KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PF01411A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone | |
2 | PF01411B |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone | |
3 | PF01412A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone | |
4 | PF0100 |
NXP |
14-channel configurable power management | |
5 | PF0100Z |
NXP |
14-channel configurable power management | |
6 | PF0121 |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Mobile Phone |