PF01410A Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

PF01410A

Hitachi Semiconductor
PF01410A
PF01410A PF01410A
zoom Click to view a larger image
Part Number PF01410A
Manufacturer Hitachi Semiconductor
Description PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B (Z) Product Preview 3rd. Edition November 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2...
Features



• 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 50
  –30 to +100
  –30 to +100 4 Unit V A V mW °C °C W PF01410A Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic dis...

Document Datasheet PF01410A Data Sheet
PDF 25.37KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 PF01411A
Hitachi Semiconductor
MOS FET Power Amplifier Module for E-GSM Handy Phone Datasheet
2 PF01411B
Hitachi Semiconductor
MOS FET Power Amplifier Module for E-GSM Handy Phone Datasheet
3 PF01412A
Hitachi Semiconductor
MOS FET Power Amplifier Module for E-GSM Handy Phone Datasheet
4 PF0100
NXP
14-channel configurable power management Datasheet
5 PF0100Z
NXP
14-channel configurable power management Datasheet
6 PF0121
Hitachi Semiconductor
MOS FET Power Amplifier Module for GSM Mobile Phone Datasheet
More datasheet from Hitachi Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad