PF0210 |
Part Number | PF0210 |
Manufacturer | Hitachi Semiconductor |
Description | PF0210 MOS FET Power Amplifier Module for ADC Mobile Phone ADE-208-102E (Z) Preliminary 6th Edition July 1996 Features • High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK • Low input power: 0 dBm... |
Features |
• High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK • Low input power: 0 dBm ave. Typ for π /4-DQPSK • Simple bias circuit • High speed switching: 8 µs Typ Pin Arrangement • RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0210 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Rating... |
Document |
PF0210 Data Sheet
PDF 47.89KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PF0200 |
NXP |
12-channel configurable power management | |
2 | PF0224TE6 |
KEC |
EMI Filtering TVS | |
3 | PF0010 |
Renesas Technology |
High Frequency Power MOS FET Module | |
4 | PF00105A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for AMPS Handy Phone | |
5 | PF0027 |
Renesas Technology |
MOS FET Power Amplifier Module | |
6 | PF0030 |
Hitachi Semiconductor |
MOS FET Power Amplifier |