Hitachi Semiconductor K29 Hoja de datos

No.	parte #	Fabricante	Descripción
1	K2938	Hitachi Semiconductor	2SK2938 • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline ADE-208-561B (Z) 3rd. Edition Jun 1998 LDPAK D 44 G S 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2938(S
2	2SK2931	Hitachi Semiconductor	Silicon N-Channel MOSFET • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2931 Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc
3	3SK298	Hitachi Semiconductor	Silicon N-Channel Dual Gate MOS FET • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage G
4	K2926	Hitachi Semiconductor	2SK2926 • Low on-resistance RDS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK –2 D G S 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain ADE-208-535 1st. Edition 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C)
5	2SK2933	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS(on) = 0.040Ω typ. • 4V gate drive devices. • High speed switching Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltag
6	2SK2912S	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C
7	2SK2930	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source
8	2SK2932	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS =0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2932 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag
9	2SK2934	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2934 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag
10	2SK2935	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2935 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag
11	2SK2936	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2936 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag
12	2SK2937	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK2937 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage
13	2SK2938	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2938(S) Absolute Maximum Ratings (Ta =
14	3SK296	Hitachi Semiconductor	Silicon N-Channel Dual-Gate MOSFET • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage G
15	2SK2912L	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C
16	2SK2926	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK –2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to sou
17	2SK2938S	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2938(S) Absolute Maximum Ratings (Ta =
18	2SK2956	Hitachi Semiconductor	Silicon N-Channel MOSFET • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2956 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage D
19	2SK2957L	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2957(L),2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source
20	3SK297	Hitachi Semiconductor	Silicon N-Channel Dual Gate MOS FET • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK297 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage