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| Distributor | Stock | Price | Buy |
|---|
3SK296 |
| Part Number | 3SK296 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N-Channel Dual-Gate MOSFET |
| Description | 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25. |
| Features |
• Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 1. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3SK290 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 2 | 3SK291 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET |
|
| 3 | 3SK292 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET |
|
| 4 | 3SK293 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET |
|
| 5 | 3SK294 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET |
|
| 6 | 3SK295 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 7 | 3SK297 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 8 | 3SK298 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 9 | 3SK299 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD |
|
| 10 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|
Desde 2024. D4U Semiconductor.
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