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2SK2935 |
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| Part Number | 2SK2935 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2935 Silicon N Channel MOS FET High Speed Power Switching ADE-208-558B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2935 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag. |
| Features |
• Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2935 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 35 140 35 35 105 30 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR . |
| Datasheet |
 2SK2935 Data Sheet
PDF 51.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2930 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 2 | 2SK2931 |
Renesas |
Silicon N-Channel MOSFET |
|
| 3 | 2SK2931 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK2932 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 5 | 2SK2933 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 6 | 2SK2934 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 7 | 2SK2936 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 8 | 2SK2936 |
Renesas |
Silicon N Channel MOS FET |
|
| 9 | 2SK2937 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 10 | 2SK2937 |
Renesas |
Silicon N Channel MOS FET |
|
Desde 2024. D4U Semiconductor.
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