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2SK2936 |
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| Part Number | 2SK2936 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | 2SK2936 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1050-0400 (Previous: ADE-208-559B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. Source 12 3 . |
| Features |
• Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1050-0400 (Previous: ADE-208-559B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C •FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.4.00 Sep 07, 2005 page 1 of 7 2SK2936 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 . |
| Datasheet |
 2SK2936 Data Sheet
PDF 115.14KB |
| Distributor | Stock | Price | Buy |
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2SK2936 |
| Part Number | 2SK2936 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N Channel MOS FET |
| Description | 2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2936 Abso. |
| Features |
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2936 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipatio. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2930 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 2 | 2SK2931 |
Renesas |
Silicon N-Channel MOSFET |
|
| 3 | 2SK2931 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK2932 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 5 | 2SK2933 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 6 | 2SK2934 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 7 | 2SK2935 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 8 | 2SK2937 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 9 | 2SK2937 |
Renesas |
Silicon N Channel MOS FET |
|
| 10 | 2SK2938 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
Desde 2024. D4U Semiconductor.
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